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silicon rf power semiconductors ra 01l9 595m rohs compliance , 952 - 954 mhz 1.4 w 3.3 v , 2 stage amp. for rfid reader / writer ra 01l9595m 22 jun 2010 1 / 13 electrostatic sensitive device observe handling precautions description the ra0 1l9595m is a 1.4 - watt rf mosfet amplifier module . the battery can be connected directly to the drain of the enhancement - mode mosfet transistors. the output power and drain current increase as the gate voltage increases. with a gate voltage around 0.5 v (minimum), output power and drain current increases substantially. the nominal output power becomes available at 1.5 v (typical) and 2.0 v (maximum). at v gg = 2.0 v, the typical gate current i s 1 ma. features ? enhancement - mode mosfet tra nsistors (i dd ? 0 @ v dd = 3.3 v, v gg =0v) ? p out >1.4 w , t >35% @ v dd = 3.3 v, v gg = 2.0 v, p in = 3 0mw ? frequency range: 952 - 954 mhz ? low - power control current i gg = 1 ma (typ) at v gg = 2.0 v ? module size: 9.1 x 9.2 x 1.8 mm rohs compliance ? ra01l 9595m - 101 is a roh s compliance products. ? rohs compliance is indicate by the letter ?g? after the lot marking . ? this product include the lead in the glass of electronic parts and the lead in electronic ceramic parts. how ever,it is applicable to the following exceptions o f rohs directions. 1.lead in the g lass of a cathode - ray tube, electronic parts, and fluorescent tubes. 2.lead in electronic c eramic parts. ordering information: order number supply form ra0 1l9595m - 1 01 antistatic tray, 1 68 modules/tray block diagram 1 rf input (p in ) 2 gate voltage (v gg ), power control 3 drain voltage (v dd ), battery 4 rf output (p out ) 5 rf ground 3 2 4 1 5 package code: h58
silicon rf power semiconductors rohs compliant ra01l9595m ra 01l9595m 22 jun 2010 2 / 13 electrostatic sensitive device observe handling precautions maximum rati ngs ( t case =+25 deg.c. unless otherwise specified ) symbol parameter conditions rating unit v dd drain voltage v gg <2.0 v , z g =z l =50 ohm 6 v v gg gate voltage v dd <3.3 v, p in =0 m w , z g =z l =50 ohm 3 v p in input power 50 mw p out outpu t power 4 w t case(op) operation case temperature range f= 952 - 954 mhz, v gg <2.0 v z g =z l =50 ohm - 30 to + 90 c t stg storage temperature range - 40 to +110 c the above parameters are independently guaranteed. electrical characteristics ( t case =+25 c , z g =z l =50 ? , unless otherwise specified ) sym bol parameter conditions min typ max unit f frequency range 952 - 954 mhz p out output power 1.4 - - w t total efficiency 35 - - % 2f o 2 nd harmonic - - - 30 dbc ? in input vswr v dd = 3.3 v v gg = 2.0 v p in =30mw - - 4.4:1 ? ? stability v dd = 2.5/3.3/6.0 v , v g g =0.5 - 2.0v, p in =20 - 50mw , po<2.5w zg=50ohm, load vswr=4:1 no parasitic oscillation ? ? load vswr tolerance v dd = 6.0 v, p i n = 3 0mw, p out = 2 w (v gg c ontrol), zg=50ohm, l oad vswr =20:1 no degradation or destroy ? all parameters, conditions, ratings, and limits are subject to change without notice.
silicon rf power semiconductors rohs compliant ra01l9595m ra 01l9595m 22 jun 2010 3 / 13 electrostatic sensitive device observe handling precautions typical performance ( vdd=3.3v, t case =+25 deg.c , z g =z l =50 ? , unless otherwise specified ) output power, power gain and output power and drain current drain current versus input power versus gate voltage output power and drain current versus drain voltage 0 10 20 30 40 -10 -5 0 5 10 15 20 input power p in (dbm) o u t p u t p o w e r p o u t ( d b m ) p o w e r g a i n g p ( d b ) 0 1 2 3 4 d r a i n c u r r e n t i d d ( a ) f=953mhz, vdd=3.3v, vgg=2.0v p out gp i dd 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1 1.5 2 2.5 3 gate voltage v gg (v) o u t p u t p o w e r p o u t ( w ) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 d r a i n c u r r e n t i d d ( a ) p out f=953mhz, vdd=3.3v, pin=30mw i dd 0 1 2 3 4 5 6 1 2 3 4 5 6 drain voltage v dd (v) o u t p u t p o w e r p o u t ( w ) 0 1 2 3 4 5 6 d r a i n c u r r e n t i d d ( a ) p out f=953mhz, vgg=2.0v, pin=30mw i dd output power, total efficiency, 2 nd , 3 rd harmonics versus frequency versus frequency input vswr versus frequency 0 1 2 3 4 5 940 945 950 955 960 frequency f(mhz) o u t p u t p o w e r p o u t ( w ) 0 5 10 15 20 25 30 35 40 45 50 t o t a l e f f i c i e n c y ( % ) v dd =3.3v v gg =2.0v p in =30mw p out t -60 -55 -50 -45 -40 -35 -30 940 945 950 955 960 frequency f(mhz) h a r m o n i c s ( d b c ) v dd =3.3v v gg =2.0v p in =30mw 2nd 3rd 1 2 3 4 5 940 945 950 955 960 frequency f(mhz) i n p u t v s w r r i n ( - ) v dd =3.3v v gg =2.0v p in =30mw r in
silicon rf power semiconductors rohs compliant ra01l9595m ra 01l9595m 22 jun 2010 4 / 13 electrostatic sensitive device observe handling precautions typical performance ( vdd=5.0v, t case =+25 deg.c , z g =z l =50 ? , unless otherwi se specified ) output power, total efficiency, 2 nd , 3 rd harmonics versus frequency versus frequency input vswr versus frequency 0 1 2 3 4 5 940 945 950 955 960 frequency f(mhz) o u t p u t p o w e r p o u t ( w ) 0 5 10 15 20 25 30 35 40 45 50 t o t a l e f f i c i e n c y ( % ) v dd =5.0v v gg =2.0v p in =30mw p out t@po=2w -60 -55 -50 -45 -40 -35 -30 940 945 950 955 960 frequency f(mhz) h a r m o n i c s ( d b c ) v dd =5.0v v gg =2.0v p in =30mw 2nd 3rd 1 2 3 4 5 940 945 950 955 960 frequency f(mhz) i n p u t v s w r r i n ( - ) v dd =5.0v v gg =2.0v p in =30mw r in
silicon rf power semiconductors rohs compliant ra01l9595m ra 01l9595m 22 jun 2010 5 / 13 electrostatic sensitive device observe handling precautions typical performance ( v dd=3.3v, vgg=2v, pout=1w , modulation type bpsk , ta=25deg.c ) output power versus frequency cf=952.2mhz cf=953.8mhz , datarate 40kbps datarate 40kbps cf=952. 3 mhz , cf=953. 7 mhz datara te 8 0kbps datarate 8 0kbps cf=952. 5 mhz , cf=953. 5 mhz datarate 16 0kbps datarate 16 0kbps -60 -50 -40 -30 -20 -10 0 10 20 30 40 951.6 951.8 952 952.2 952.4 952.6 952.8 freq(mhz) o u t p u t ( d b m ) -60 -50 -40 -30 -20 -10 0 10 20 30 40 951.7 951.9 952.1 952.3 952.5 952.7 952.9 freq(mhz) o u t p u t ( d b m ) -60 -50 -40 -30 -20 -10 0 10 20 30 40 951.7 951.9 952.1 952.3 952.5 952.7 952.9 953.1 953.3 freq(mhz) o u t p u t ( d b m ) -60 -50 -40 -30 -20 -10 0 10 20 30 40 953.2 953.4 953.6 953.8 954 954.2 954.4 freq(mhz) o u t p u t ( d b m ) -60 -50 -40 -30 -20 -10 0 10 20 30 40 953.1 953.3 953.5 953.7 953.9 954.1 954.3 freq(mhz) o u t p u t ( d b m ) -60 -50 -40 -30 -20 -10 0 10 20 30 40 952.7 952.9 953.1 953.3 953.5 953.7 953.9 954.1 954.3 freq(mhz) o u t p u t ( d b m )
silicon rf power semiconductors rohs compliant ra01l9595m ra 01l9595m 22 jun 2010 6 / 13 electrostatic sensitive device observe handling precautions typical performance ( v dd= 5.0 v, vgg=2v, m odulation type bpsk , pin control, ta=25deg.c ) output power versus frequency cf=952.2mhz cf=953.8mhz , datarate 40kbps datarate 40kbps cf=952. 3 mhz , cf=953. 7 mhz datarate 8 0kbps datarate 8 0kbps cf=952. 5 mhz , cf=953. 5 mhz datarate 16 0kbps datarate 16 0kbps -60 -50 -40 -30 -20 -10 0 10 20 30 40 951.6 951.8 952 952.2 952.4 952.6 952.8 freq(mhz) o u t p u t ( d b m ) po=1.5w po=1w -60 -50 -40 -30 -20 -10 0 10 20 30 40 951.7 951.9 952.1 952.3 952.5 952.7 952.9 freq(mhz) o u t p u t ( d b m ) po=1.5w po=1w -60 -50 -40 -30 -20 -10 0 10 20 30 40 951.7 951.9 952.1 952.3 952.5 952.7 952.9 953.1 953.3 freq(mhz) o u t p u t ( d b m ) po=1.5w po=1w -60 -50 -40 -30 -20 -10 0 10 20 30 40 953.2 953.4 953.6 953.8 954 954.2 954.4 freq(mhz) o u t p u t ( d b m ) po=1.5w po=1w -60 -50 -40 -30 -20 -10 0 10 20 30 40 953.1 953.3 953.5 953.7 953.9 954.1 954.3 freq(mhz) o u t p u t ( d b m ) po=1.5w po=1w -60 -50 -40 -30 -20 -10 0 10 20 30 40 952.7 952.9 953.1 953.3 953.5 953.7 953.9 954.1 954.3 freq(mhz) o u t p u t ( d b m ) po=1.5w po=1w
silicon rf power semiconductors rohs compliant ra01l9595m ra 01l9595m 22 jun 2010 7 / 13 electrostatic sensitive device observe handling precautions outline drawing (mm) 1 rf i nput (p in ) 2 gate voltage (v gg ) 3 drain voltage (v dd ) 4 rf o utput (p out ) 5 rf g round indexmark(pin) 1 . 8 + / - 0 . 1 5 0 . 7 5 + / - 0 . 1 8.7+/-0.1 9.2+/-0.2 9 . 1 + / - 0 . 2 8 . 6 + / - 0 . 1 7 . 6 + / - 0 . 2 2.55+/-0.2 4.6+/-0.2 8.0+/-0.2 8.6+/-0.2 4 . 2 + / - 0 . 2 5 . 6 + / - 0 . 2 7 . 8 + / - 0 . 2 1 rf i nput (p in ) 2 ga te voltage (v gg ) 3 drain voltage (v dd ) 4 rf o utput (p out ) 5 rf g round (case)
silicon rf power semiconductors rohs compliant ra01l9595m ra 01l9595m 22 jun 2010 8 / 13 electrostatic sensitive device observe handling precautions 1 rf i nput (p in ) 2 gate voltage (v gg ) 3 drain voltage (v dd ) 4 rf o utput (p out ) 5 rf g round c1, c2 : 4700pf, 22uf in parallel directional coupler attenuator power meter spectrum analyzer signal generator attenuator pre - amplifier power meter directional coupler z g =50 ? z l =50 ? c1 - + dc power supply v gg c2 + - dc power supply v dd test block diagram attenuator equivalent circuit dut 5 1 4 3 2
silicon rf power semiconductors rohs compliant ra01l9595m ra 01l9595m 22 jun 2010 9 / 13 electrostatic sensitive device observe handling precautions recommendations and application information: construction: this module consists of an alumina substrate. for mechanical protectio n, a metal cap is attached (witch makes the improvement of rf radiation easy ) . the mosfet transistor chips are die bonded onto the substrate , wire bonded to the substrate, and coated with resin. lines on the substrate (eventually inductors), chip capacitor s, and resistors form the bias and matching circuits. t he dc and rf connection is provided at the backside of substrate. following conditions must be avoided: a) bending forces on the alumina substrate (for example, by fast thermal changes) b) d efluxing so lvents reacting with the resin coating on the mosfet chips (for example, trichloroethylene) c ) frequent on/off switching that causes thermal expansion of the resin d ) esd, surge, over voltage in combination with load vswr, and oscillation esd: this mosfet module is sensitive to esd voltages down to 1000v. appropriate esd precautions are required. thermal design of the heat sink: at p out = 1.4 w, v dd = 3.3 v and p in = 3 0mw each stage transistor operating conditions are : stage p in (w) p out (w) r th(ch - case) (c/w) i dd @ ? t = 40 % (a) v dd (v) 1 st 0.0 3 0.3 57.2 0.11 2 nd 0.3 1.4 7.6 1.10 3.3 the channel temperatures of each stage transistor t ch = t case + (v dd x i dd - p out + p in ) x r th(ch - case) are: t ch1 = t case + ( 3.3 v x 0. 11 a ? 0.3 w + 0.0 3 w) x 57.2 c/w = t case + 5.3 c t ch2 = t case + ( 3.3 v x 1.10 a ? 1.4 w + 0.3 w) x 7.6 c/w = t case + 19.2 c for long - term reliability, it is best to keep the module case temperature (t case ) below 70 c. for an ambient temperature t air = 45 c and p out = 3 w , the required thermal resistance r th (ca se - air) = ( t case - t air ) / ( (p out / ? t ) - p out + p in ) of the heat sink, including the contact resistance, is: r th(case - air) = ( 70 c - 45 c) / ( 1.4w/35 % ? 1.4 w + 0.0 3 w) = 9.51 c /w when mounting the module with the thermal resistance of 9.51 c / w, the ch annel temperature of each stage transistor is: t ch1 = t air + 30.3 c t ch2 = t air + 44.2 c the 15 0 c maximum rating for the channel temperature ensures application under derated conditions.
silicon rf power semiconductors rohs compliant ra01l9595m ra 01l9595m 22 jun 2010 10 / 13 electrostatic sensitive device observe handling precautions output power control: the recommended method to control the o utput power is by the input power ( pin ). oscillation: to test rf characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a 4.700 pf chip capacitor, located close to the module, and a 22 f (or more) elec trolytic capacitor. when an amplifier circuit around this module shows oscillation, the following may be checked: a) do the bias decoupling capacitors have a low inductance pass to the case of the module? b) is the load impedance z l =50 ? c) is the source im pedance z g =50 ? a ttention: 1.high temperature; this product might have a heat generation while operation,please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. at the near the product,do not place the combustible material that have possibilities to arise the fire. 2. generation of high frequency power; this product generate a high frequency power. please take notice that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3. before use; before use the product,please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. precaution for the use of mitsubishi silicon rf power amplifier devices : 1. the specifications of mention are not guarantee values in this data sheet. please confirm additional details regarding operation of these products from the formal specification sheet. for copies of the formal specification sheets, p lease contact one of our sales offices . 2.ra series products (rf power amplifier modules) are designed for consumer mobile communication terminals and were not specifically designed for use in other application s . in particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communica tions elements. examples of critical communications elements would include transmitters for base station application s and fixed station application s that operate with long term continuous transmi ssion and a higher on - off frequency during transmitting , esp ecially for systems that may have a high impact to society. 3.ra series products use mosfet semiconductor technology. the y are sensitive to esd voltage therefore a ppropriate esd precautions are required. 4 .in order to maximize reliability of the equipment, it is better to keep the devices temperature low. it is recommended to utilize a sufficient sized heat - sink in conjunction with other cooling methods as needed (fan, etc.) to keep the case temperature for ra series products lower than 60deg/c under stand ard conditions , and less than 90deg/c under extreme conditions . 5 .ra series products are designed to operate into a nominal load impedance of 50 ohm s . under the condition of operating into a severe high load vswr approaching an open or short, an over load condition could occur. in the worst case there is risk for burn out of the transistors and burning of other parts including the substrate in the module. 6 .the formal specification in cludes a guarantee against parasitic oscillation under a specified maxim um load mismatch condition . the inspection for parasitic oscillation is performed on a sample basis on our manufacturing line . it is recommended that verification of no parasitic oscillation be performed at the completed equipment level also . 7 .for specifi c precaution s regarding assembly of these products into the equipment , please refer to the supplementary item s in the specification sheet. 8 . warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in a ny way from it?s original form. 9 .for additional ?s afety first ? in your circuit design and notes regarding the materials , please refer the last page of this data sheet . 10 . please refer to the additional precaution s in the formal specification sheet.
silicon rf power semiconductors rohs compliant ra01l9595m ra 01l9595m 22 jun 2010 11 / 13 electrostatic sensitive device observe handling precautions p.c.b land pattern recommendation mounting method mitsubishi recommends device mount ing like fig.1. in order to heat radiation, we recommend to fix the pcb and heat sink by screw. t his pcb has through holes that filled up with re sin to restrain the solder flow under the rf ground . the interval of through holes is 0. 4 mm and these holes are arranged in the shape of equilateral triangles. # note: mitsubishi heat sink size=30 * 60 * 10 unit: mm 0 . 4 0.5 6 0 4 . 2 0 5 . 6 0 8 . 6 0 9 . 7 0 2.55 4.60 8.00 8.60 equilateral triangle arrangement through hole reflow soldering h eat sink fig.1 rf ground drain rf output printed circuit board f ix with screw s . rf input gate
silicon rf power semiconductors rohs compliant ra01l9595m ra 01l9595m 22 jun 2010 12 / 13 electrostatic sensitive device observe handling precautions reflow solderi ng regarding to reflow soldering, mitsubishi recommend the heat profile of fig.2. reflow soldering is able to do till 3 times. fig.2 peak 255+0/-5 max 10sec max above 200 70 sec max 175 10 110 20 sec time(sec) t e m p e r a t u r e
silicon rf power semiconductors rohs compliant ra01l9595m ra 01l9595m 22 jun 2010 13 / 13 electrostatic sensitive device observe handling precautions m itsubishi electric corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. trouble with semiconduct ors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non - flammable material or (iii) prevention against any malfunction or mishap. keep safety first in your circuit designs ! - these materials are intended as a reference to assist our customers in the selection of the mitsubishi semiconductor product best suited to the customer?s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to mitsubishi electric corporation or a third party. - mitsubishi electric corporation assumes no responsibility for any damage, or infringement of any third - par ty?s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. - all information contained in these materials, including product data, diagrams, charts, program s and algorithms represents information on products at the time of publication of these materials, and are subject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that cu stomers contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. mitsubishi electric corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by mitsubishi electric corporation by var ious means, including the mitsubishi semiconductor home page (http://www.mitsubishichips.com). - when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to ev aluate all information as a total system before making a final decision on the applicability of the information and products. mi tsubishi electric corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. - mitsubishi electric corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor when considering the use of a product contained herein for any speci fic purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. - the prior written approval of mitsubishi electric corporation is necessary to reprint or reproduce in whole or in part these materials. - if these products or technologies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other than the approved destination. notes regarding these materials

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